EUV Lithography Enables Imec to Showcase Advanced Logic and DRAM Structures

Imec, the research and innovation hub in nanoelectronics and digital technologies, is stirring up the world of lithography. In their joint lab with ASML, located in Veldhoven, the Netherlands, they have successfully printed patterned structures using the 0.55NA EUV scanner. These structures include random logic structures down to 9.5 nm, random vias with a 30 nm center-to-center distance, 2D features at a 22 nm pitch, and a DRAM specific layout at P32nm. The best part? All of these structures were printed after a single exposure.

This achievement is a major milestone for High NA EUV Lithography, as it demonstrates the readiness of the ecosystem to enable high-resolution, single-exposure printing. The joint lab between Imec and ASML, which recently opened its doors, allows customers to access the High NA EUV scanner and develop their own use cases based on their design rules and layouts. This means that companies can now take advantage of this technology to push the boundaries of what is possible in their own industries.

One of the most impressive feats accomplished by Imec is the patterning of single-exposure random logic structures with 9.5 nm dense metal lines, corresponding to a 19 nm pitch. This achievement showcases the incredible precision and accuracy of the High NA EUV scanner, as it achieves sub 20 nm tip-to-tip dimensions. In addition, the random vias with a 30 nm center-to-center distance exhibited excellent pattern fidelity and critical dimension uniformity. This is a crucial aspect of lithography, as any deviations or inconsistencies in the pattern can lead to defects and reduced performance.

Imec also demonstrated the potential of High NA Lithography to enable 2D routing by successfully patterning 2D features at a P22nm pitch. This opens up new possibilities for circuit design and layout, as it allows for more efficient and compact routing of signals. By utilizing High NA Lithography, companies can improve the performance and functionality of their electronic devices.

But it doesn’t stop there. Imec has also shown that High NA technology has the potential to replace multiple mask layers with just a single exposure. In a single exposure, they were able to pattern designs that integrate the storage node landing pad with the bit line periphery for DRAM. This breakthrough not only simplifies the manufacturing process but also reduces the cost and complexity associated with multiple mask layers.

These remarkable results are the culmination of extensive collaboration and preparation between Imec, ASML, and their partners. Prior to the exposures, Imec carefully prepared dedicated wafer stacks, which included advanced resists, underlayers, and photomasks. They also transferred High NA EUV baseline processes, such as optical proximity correction (OPC), integrated patterning, and etch techniques, to the 0.55NA EUV scanner. This meticulous preparation ensured the success of the printing process and paved the way for future advancements in High NA EUV Lithography.

Steven Scheer, senior vice president of compute technologies & systems at Imec, expressed his excitement about the achievements in the joint lab, stating, “The results showcase the unique potential for High NA EUV to enable single-print imaging of aggressively-scaled 2D features, improving design flexibility as well as reducing patterning cost and complexity.” He also emphasized the importance of these results for the patterning ecosystem partners, as they provide valuable insights and support for further advancements in High NA EUV-specific materials and equipment.

Luc Van den hove, president and CEO of Imec, highlighted the significance of these results for the future of lithography, stating, “High NA EUV will therefore be highly instrumental to continue the dimensional scaling of logic and memory technologies, one of the key pillars to push the roadmaps deep into the ‘angstrom era’.” He also acknowledged the role played by the joint lab in accelerating the introduction of High NA lithography into manufacturing.

With these achievements, Imec is revolutionizing the world of lithography and paving the way for the next generation of electronic devices. The combination of their expertise, the state-of-the-art High NA EUV scanner, and the collaborative efforts of their partners has resulted in a significant leap forward in high-resolution, single-exposure printing. The possibilities are endless, and we can’t wait to see what the future holds for High NA EUV Lithography.

Background Information

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About ASML:

ASML is an innovation leader in the global semiconductor industry. ASML provide chipmakers with hardware, software and services to mass produce patterns on silicon through lithography. Their lithography systems use ultraviolet light to create billions of tiny structures on silicon that together make up a microchip. Founded in 1984 in the Netherlands with just a handful of employees, ASML hass now grown to over 40,000 employees, 143 nationalities and more than 60 locations around the world.

  

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Technology Explained

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EUV: Extreme Ultraviolet Lithography (EUV or EUVL) is an advanced semiconductor manufacturing technique that employs extremely short wavelengths of light in the extreme ultraviolet spectrum to create intricate patterns on silicon wafers. Utilizing a wavelength around 13.5 nanometers, significantly shorter than traditional lithography methods, EUVL enables the production of smaller and more densely packed integrated circuits, enhancing the performance and efficiency of modern microprocessors and memory chips.

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