Samsung Unveils Revolutionary 36GB HBM3E 12H DRAM, a Game-Changer in Memory Technology

Samsung Electronics introduces the HBM3E 12H, the industry's first 12-stack HBM3E DRAM with a capacity of 36GB and a bandwidth of 1,280GB/s, showcasing significant improvements over its predecessor and catering to the growing demand for higher-capacity HBM in the AI industry.

The HBM3E 12H is the industry's first 12-stack HBM3E DRAM, showcasing Samsung's memory technology.
With a bandwidth of up to 1,280 GB/s and a capacity of 36 GB, the HBM3E 12H boasts significant improvements of over 50% compared to its predecessor.
Samsung's advanced thermal compression non-conductive film (TC NCF) technology allows for a thinner and more compact design, while also improving thermal properties and increasing product yield.

Samsung Electronics, known for its memory technology, has launched its latest innovation in the form of the HBM3E 12H. This new product is not only the industry’s first 12-stack HBM3E DRAM, but also boasts the highest capacity of any HBM product to date. With a bandwidth of up to 1,280 gigabytes per second (GB/s) and a capacity of 36 gigabytes (GB), the HBM3E 12H showcases significant improvements of over 50% compared to its predecessor, the 8-stack HBM3 8H.

YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, highlighted the growing demand for higher-capacity HBM in the AI industry. He stated, “The industry’s AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need.” Samsung aims to establish itself as a leader in high-capacity HBM technology and contribute to the advancement of the AI era.

One notable feature of the HBM3E 12H is its use of advanced thermal compression non-conductive film (TC NCF). This technology allows the 12-layer products to maintain the same height specification as their 8-layer counterparts, meeting current HBM package requirements. Moreover, the TC NCF helps mitigate chip die warping associated with thinner dies, which becomes more critical as higher stacks are introduced. Samsung’s continuous efforts to reduce the thickness of its NCF material have resulted in an industry-leading seven-micrometer (µm) gap between chips, eliminating voids between layers and achieving enhanced vertical density of over 20% compared to the HBM3 8H product.

In addition to these advancements, Samsung’s advanced TC NCF improves the thermal properties of the HBM by utilizing bumps of various sizes between chips. During the chip bonding process, smaller bumps are used for signaling, while larger ones are placed in areas that require heat dissipation. This approach not only enhances the overall performance of the HBM but also increases product yield.

As AI applications continue to grow exponentially, the HBM3E 12H is poised to become an optimal solution for future systems that demand higher memory capacity. Its superior performance and capacity will enable customers to manage their resources more flexibly and reduce the total cost of ownership (TCO) for data centers. In fact, compared to adopting the HBM3 8H, the HBM3E 12H can increase the average speed for AI training by 34% and expand the number of simultaneous users of inference services by over 11.5 times.

Samsung has already begun sampling the HBM3E 12H to customers, with mass production scheduled for the first half of this year. With this product, Samsung continues to push the boundaries of memory technology, catering to the evolving needs of the AI industry.

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Background Information

About Samsung: Samsung, a South Korean multinational conglomerate, has established itself as a global leader in various industries, including electronics, technology, and more. Founded in 1938, Samsung's influence spans from smartphones and consumer electronics to semiconductors and home appliances. With a commitment to innovation, Samsung has contributed products like the Galaxy series of smartphones, QLED TVs, and SSDs that have revolutionized the way we live and work.

Technology Explained

HBM3E: HBM3E is the latest generation of high-bandwidth memory (HBM), a type of DRAM that is designed for artificial intelligence (AI) applications. HBM3E offers faster data transfer rates, higher density, and lower power consumption than previous HBM versions. HBM3E is developed by SK Hynix, a South Korean chipmaker, and is expected to enter mass production in 2024. HBM3E can achieve a speed of 1.15 TB/s and a capacity of 64 GB per stack. HBM3E is suitable for AI systems that require large amounts of data processing, such as deep learning, machine learning, and computer vision.