HBM3E

HBM3E is the latest generation of high-bandwidth memory (HBM), a type of DRAM that is designed for artificial intelligence (AI) applications. HBM3E offers faster data transfer rates, higher density, and lower power consumption than previous HBM versions.

HBM3E is developed by SK Hynix, a South Korean chipmaker, and is expected to enter mass production in 2024. HBM3E can achieve a speed of 1.15 TB/s and a capacity of 64 GB per stack. HBM3E is suitable for AI systems that require large amounts of data processing, such as deep learning, machine learning, and computer vision.


October 2023

21 OctoberSamsung Electronics introduces Memory Tech, Paving the Way for Hyperscale AI Dominance
21 OctoberSamsung introduces HBM3E ‘Shinebolt’ Memory, Revolutionizing AI Applications
20 OctoberSamsung Electronics introduces Memory Innovations, Paving the Way for Hyperscale AI Era
19 OctoberSupermicro begins shipping servers powered by NVIDIA GH200 Grace Hopper superchip
12 OctoberSamsung’s HBM4 Memory Set to Revolutionize Tech Landscape with 2025 Debut
10 OctoberNVIDIA’s Data-Center Roadmap Reveals GB200 and GX200 GPUs for 2024-2025

September 2023

27 SeptemberTSMC shows Innovation Poised to Revolutionize 3D IC Technology
22 SeptemberSK hynix introduces Memory Tech at Intel Innovation 2023

August 2023

21 AugustSK hynix begins HBM3E volume production for NVIDIA GH200 Grace Hopper.