Samsung Electronics introduces Memory Innovations, Paving the Way for Hyperscale AI Era


October 20, 2023

Samsung Electronics introduces Memory Innovations, Paving the Way for Hyperscale AI Era

Summary: Samsung Electronics recently hosted its annual Memory Tech Day, unveiling innovations and new memory products to drive advancements in various applications, including cloud computing, edge devices, and automotive vehicles.

  • Samsung introduced several new product innovations, such as the HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD.
  • Samsung is developing new 3D structures for sub-10-nanometer (nm) DRAM, enabling larger single-chip capacities exceeding 100 gigabits (Gb).
  • Samsung is making significant progress in NAND flash technology, aiming to shrink cell sizes and refine channel hole etching techniques to introduce 1,000-layer vertical NAND (V-NAND).


Samsung Electronics, a leader in memory technology, recently hosted its annual Memory Tech Day, where it launched innovations and new memory products that will drive advancements in various applications, including cloud computing, edge devices, and automotive vehicles. The event, attended by around 600 customers, partners, and industry experts, served as a platform for Samsung executives to discuss their vision of “Memory Reimagined,” outlining long-term plans for memory technology leadership, market trends, and sustainability goals.

During the event, Samsung introduced several new product innovations, such as the HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD. Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, delivered a keynote address highlighting Samsung’s strategies to overcome the challenges of the hyperscale era through innovations in transistor structures and materials. For instance, Samsung is developing new 3D structures for sub-10-nanometer (nm) DRAM, enabling larger single-chip capacities exceeding 100 gigabits (Gb). Additionally, Samsung is working on its next-generation 11 nm-class DRAM, which promises the industry’s highest density.

Samsung is also making significant progress in NAND flash technology, aiming to shrink cell sizes and refine channel hole etching techniques to introduce 1,000-layer vertical NAND (V-NAND). The company is on track to launch its ninth-generation V-NAND with the highest layer count based on a double-stack structure. Mass production of this new V-NAND is scheduled to begin early next year.

“The new era of hyperscale AI presents an intersection of innovation and opportunity, despite the challenges,” said Lee. “Through endless imagination and relentless perseverance, we will continue our market leadership by driving innovation and collaborating with customers and partners to deliver solutions that expand possibilities.”

One of the notable introductions at the event was the HBM3E Shinebolt, Samsung’s next-generation high-bandwidth memory (HBM) solution. Shinebolt is designed to power next-generation AI applications, improving the total cost of ownership and accelerating AI-model training and inference in data centers. With an impressive speed of 9.8 gigabits-per-second (Gbps) per pin, Shinebolt achieves transfer rates exceeding 1.2 terabytes-per-second (TBps). Samsung has optimized its non-conductive film (NCF) technology to enable higher layer stacks and enhance thermal characteristics.

Samsung’s 8H and 12H HBM3 products are already in mass production, and samples for Shinebolt are being shipped to customers. Leveraging its expertise as a total semiconductor solutions provider, Samsung plans to offer a custom turnkey service that combines next-generation HBM, advanced packaging technologies, and Foundry offerings.

Other products showcased at the event include the 32Gb DDR5 DRAM with the industry’s highest capacity, the industry’s first 32 Gbps GDDR7, and the petabyte-scale PBSSD, which significantly boosts Storage capabilities for server applications.

In response to the growing need for processing data-intensive tasks in AI technologies, Samsung launched a range of memory solutions that support high-performance, high-capacity, low-power, and small form factors at the edge. The company introduced the industry’s first 7.5 Gbps LPDDR5X CAMM2, expected to revolutionize the next-generation PC and laptop DRAM market. Samsung also showcased its 9.6 Gbps LPDDR5X DRAM, LLW DRAM specialized for on-device AI, next-generation Universal Flash Storage (UFS), and the high-capacity Quad-Level Cell (QLC) SSD BM9C1 for PCs.

Moreover, Samsung demonstrated its commitment to automotive memory solutions by presenting the Detachable AutoSSD. This innovative SSD allows data access from a single SSD to multiple System on Chips (SoCs) through virtual storage. With a sequential read speed of up to 6,500 megabytes-per-second (MBps) and a capacity of 4 TB, the Detachable AutoSSD offers convenient upgrades and adjustments for vehicle users and manufacturers. Samsung also showcased automotive memory solutions, including high-bandwidth GDDR7 and LPDDR5X with a more compact package size.

Samsung emphasized its dedication to minimizing environmental impact by highlighting various innovations within its semiconductor operations that contribute to increased energy efficiency. The company plans to develop ultra-low-power memory technologies to reduce power consumption in data centers, PCs, and mobile devices. Additionally, Samsung aims to use recycled materials in portable SSD products to reduce its carbon footprint. The company’s next-generation solutions, such as the PBSSD, will also help reduce energy usage in server systems by maximizing space efficiency and rack capacity.

As part of its sustainability initiative, “technology that makes technology sustainable,” Samsung’s semiconductor business will collaborate with stakeholders across the value chain to address global climate issues.

With its continuous innovation and commitment to advancing memory technology, Samsung is poised to maintain its market leadership and deliver solutions that push the boundaries of what’s possible.

Samsung Electronics introduces Memory Innovations, Paving the Way for Hyperscale AI Era

Samsung Electronics introduces Memory Innovations, Paving the Way for Hyperscale AI Era

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Background Information


About Samsung: Samsung, a South Korean multinational conglomerate, has established itself as a global leader in various industries, including electronics, technology, and more. Founded in 1938, Samsung's influence spans from smartphones and consumer electronics to semiconductors and home appliances. With a commitment to innovation, Samsung has contributed products like the Galaxy series of smartphones, QLED TVs, and SSDs that have revolutionized the way we live and work.

Samsung Website: https://www.samsung.com
Samsung LinkedIn: https://www.linkedin.com/company/samsung

Technology Explained


DDR5: DDR5 (Double Data Rate 5) is the next generation of memory technology for the computer industry. It is a modern day improvement on earlier DDR technologies, with faster speeds, greater bandwidth and higher capacities. DDR5 enables higher resolution, seamless gaming experiences and faster data transfer rates, making it an ideal choice for high-performance computing and 4K gaming. With its greater RAM compatibility, DDR5 provides faster buffering times and raised clock speeds, giving users an improved overall work system. DDR5 is also optimized for multi-tasking, allowing users to multitask without experiencing a significant drop in performance, increasing the productivity of digital tasks. As an ever-evolving technology, DDR5 is paving the way for the computer industry into a new and powerful era.


Foundry: A foundry is a dedicated manufacturing facility focused on producing semiconductor components like integrated circuits (ICs) for external clients. These foundries are pivotal in the semiconductor industry, providing diverse manufacturing processes and technologies to create chips based on designs from fabless semiconductor firms or other customers. This setup empowers companies to concentrate on innovative design without needing substantial investments in manufacturing infrastructure. Some well-known foundries include TSMC (Taiwan Semiconductor Manufacturing Company), Samsung Foundry, GlobalFoundries, and UMC (United Microelectronics Corporation).


GDDR7: GDDR7 (Graphics Double Data Rate 7) is the seventh generation of graphics double data rate (GDDR) memory. It is a type of dynamic random-access memory (DRAM) that is specifically designed for use in graphics cards. GDDR7 memory offers a number of advantages over previous generations of GDDR memory. GDDR7 is a significant improvement over previous generations of GDDR memory. It offers faster speeds up to 32 gigabits per second (Gbps) per pin, lower power consumption, and improved error correction. This makes it ideal for use in high-performance graphics cards and other applications that require high bandwidth and low latency.


HBM3E: HBM3E is the latest generation of high-bandwidth memory (HBM), a type of DRAM that is designed for artificial intelligence (AI) applications. HBM3E offers faster data transfer rates, higher density, and lower power consumption than previous HBM versions. HBM3E is developed by SK Hynix, a South Korean chipmaker, and is expected to enter mass production in 2024. HBM3E can achieve a speed of 1.15 TB/s and a capacity of 64 GB per stack. HBM3E is suitable for AI systems that require large amounts of data processing, such as deep learning, machine learning, and computer vision.


LPDDR5X: LPDDR5X is a type of computer memory technology that is used in many modern computers. It stands for Low Power Double Data Rate 5X and is a type of Random Access Memory (RAM). It is designed to be more efficient than its predecessors, allowing for faster data transfer speeds and lower power consumption. This makes it ideal for use in laptops, tablets, and other mobile devices. It is also used in gaming consoles and other high-end computers. LPDDR5X is capable of transferring data at up to 8400 megabits per second, making it one of the fastest types of RAM available. This makes it ideal for applications that require high performance, such as gaming, video editing, and 3D rendering.


NAND: NAND technology is a type of non-volatile memory that is used in many computer applications. It is a type of flash memory that is used to store data in a non-volatile manner, meaning that the data is not lost when the power is turned off. NAND technology is used in many computer applications, such as solid-state drives, USB flash drives, digital cameras, and memory cards. It is also used in many embedded systems, such as cell phones, tablets, and other consumer electronics. NAND technology is a reliable and cost-effective way to store data, making it a popular choice for many computer applications.


SSD: A Solid State Drive (SSD) is a modern data storage device that employs flash memory technology to store data electronically. Unlike traditional hard disk drives (HDDs), SSDs have no moving parts, resulting in significantly faster read and write speeds. This leads to quicker boot times, faster application loading, and smoother overall system performance. SSDs are known for their durability, shock resistance, and energy efficiency, making them ideal for laptops, ultrabooks, and other portable devices. They come in various form factors, including 2.5-inch, M.2, and PCIe cards, and are favored for their reliability, quiet operation, and reduced heat generation



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