NEO Semiconductor Unveils Game-Changing 3D X-DRAM Advancement at IEEE IMW 2024

NEO Semiconductor introduces a revolutionary Floating Body Cell Mechanism for 3D X-DRAM, promising a 40,000x increase in data retention and 20x expansion of sensing window, while reducing power consumption and addressing capacity scaling bottleneck.

Revolutionary technology that promises to increase data retention by 40,000 times and expand the sensing window by 20 times
Utilizes a patented Back-gate Channel-depth Modulation mechanism for faster and more reliable DRAM performance
Potential to achieve a density of 128 Gb with 300 layers, representing an eight-fold increase in today's DRAM density

NEO Semiconductor, a developer of technologies for 3D NAND flash and DRAM memory, has just launched an exciting breakthrough in the form of a performance-boosting Floating Body Cell Mechanism for 3D X-DRAM. The announcement was made by Andy Hsu, the Founder & CEO of NEO Semiconductor, during the prestigious 16th IEEE International Memory Workshop (IMW) 2024 held in Seoul, Republic of Korea.

The newly revealed mechanism, known as Back-gate Channel-depth Modulation (BCM), promises to revolutionize data retention and sensing window capabilities. According to NEO Semiconductor, this innovative technology can increase data retention by an astounding 40,000 times and expand the sensing window by 20 times. Unlike traditional 2D Floating Body Cells that rely on the body effect to alter cell current, NEO’s BCM mechanism utilizes a back-gate voltage to modulate the channel depth. This patented invention not only enhances the sensing window and data retention but also leads to faster and more reliable DRAM performance while reducing power consumption by minimizing the need for frequent refresh cycles.

Andy Hsu expressed his pride in NEO Semiconductor’s role in propelling the DRAM industry into the 3D era while addressing the capacity scaling bottleneck faced by current 2D DRAM technology. By introducing their unique 3D X-DRAM, which adopts a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology, NEO Semiconductor aims to provide a solution that can be manufactured using existing mature 3D NAND-like processes. The company estimates that their 3D X-DRAM technology has the potential to achieve a density of 128 Gb with 300 layers, representing an eight-fold increase in today’s DRAM density. Additionally, this advancement can lead to a reduction in chip footprint and power consumption.

NEO Semiconductor’s achievements in the realm of 3D X-DRAM technology mark a significant milestone in the industry. With their innovative approach, they are poised to address the limitations of current DRAM technology and pave the way for more efficient and powerful memory solutions in the future.

NEO Semiconductor introduces Game-Changing 3D X-DRAM Advancement at IEEE IMW 2024

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Technology Explained

NAND: NAND technology is a type of non-volatile memory that is used in many computer applications. It is a type of flash memory that is used to store data in a non-volatile manner, meaning that the data is not lost when the power is turned off. NAND technology is used in many computer applications, such as solid-state drives, USB flash drives, digital cameras, and memory cards. It is also used in many embedded systems, such as cell phones, tablets, and other consumer electronics. NAND technology is a reliable and cost-effective way to store data, making it a popular choice for many computer applications.