Micron Begins Mass Production of HBM3E Solution – a Game-Changer in Memory Technology


February 26, 2024 by our News Team

Micron Technology's HBM3E solution, with its exceptional performance, energy efficiency, and scalability, is set to revolutionize the AI landscape and support the growing demand for memory solutions in data centers.

  • Micron's HBM3E solution offers unparalleled performance and energy efficiency, making it a game-changer for AI applications.
  • With a pin speed greater than 9.2 Gb/s and over 1.2 TB/s of memory bandwidth, Micron's HBM3E delivers lightning-fast data access.
  • Micron's HBM3E boasts approximately 30% lower power consumption compared to competing products, making it a cost-effective solution for data centers.


Micron Technology, a important player in the memory and storage solutions market, has announced the commencement of volume production for its HBM3E (High Bandwidth Memory 3E) solution. This technology will be integrated into nVidia’s H200 Tensor Core GPUs, which are expected to hit the market in the second quarter of 2024.

Micron’s HBM3E solution is set to revolutionize the artificial intelligence (AI) landscape by offering unparalleled performance and energy efficiency. As the demand for AI continues to soar, the need for memory solutions that can handle expanded workloads becomes increasingly crucial. Micron’s HBM3E addresses this challenge head-on with its exceptional features.

In terms of performance, Micron’s HBM3E boasts a pin speed greater than 9.2 gigabits per second (Gb/s), delivering over 1.2 terabytes per second (TB/s) of memory bandwidth. This lightning-fast data access is a game-changer for AI accelerators, supercomputers, and data centers.

Furthermore, Micron’s HBM3E leads the industry with approximately 30% lower power consumption compared to competing products. This exceptional efficiency is vital to support the growing demand and usage of AI, as it provides maximum throughput while minimizing power consumption, ultimately improving important data center operational expense metrics.

Scalability is another key advantage of Micron’s HBM3E solution. With its current capacity of 24 GB, data centers can seamlessly scale their AI applications. Whether it’s training massive neural networks or accelerating inferencing tasks, Micron’s solution provides the necessary memory bandwidth.

Sumit Sadana, Executive Vice President and Chief Business Officer at Micron Technology, expressed his excitement about the HBM3E milestone, stating, “Micron is delivering a trifecta with this HBM3E milestone: time-to-market leadership, best-in-class industry performance, and a differentiated power efficiency profile.” Sadana emphasized the critical role of memory bandwidth and capacity in AI workloads and highlighted Micron’s strong position to support the significant growth in AI with its industry-leading HBM3E and HBM4 roadmap, as well as its full portfolio of DRAM and NAND solutions for AI applications.

Micron achieved this industry-leading HBM3E design using its 1-beta technology, advanced through-silicon via (TSV), and other innovative packaging solutions. As a proven leader in memory for 2.5D/3D-stacking and advanced packaging technologies, Micron takes pride in being a partner in TSMC’s 3DFabric Alliance, contributing to the future of semiconductor and system innovations.

In addition to the 24 GB HBM3E, Micron is also preparing to sample a 36 GB 12-High HBM3E in March 2024. This upgraded version promises even greater performance, exceeding 1.2 TB/s, and superior energy efficiency compared to competing solutions.

Micron will be showcasing its industry-leading AI memory portfolio and roadmaps at nVidia GTC, a global AI conference scheduled to begin on March 18. As a sponsor of the event, Micron aims to provide further insights into its technologies and their impact on the AI landscape.

Micron Begins Mass Production of HBM3E Solution – a Game-Changer in Memory Technology

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Background Information


About Micron Technology:

Micron Technology, headquartered in Boise, Idaho, is a global leader in innovative memory and storage solutions. Founded in 1978 by Ward Parkinson, Joe Parkinson, Dennis Wilson, and Doug Pitman, Micron has played a pivotal role in advancing semiconductor technology. The company produces dynamic random-access memory (DRAM), flash memory, and USB flash drives. Micron’s products cater to various applications, including AI, automotive, mobile devices, data centers, and client PCs. Their commitment to innovation and memory technology has positioned them as a key player in the industry.

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About nVidia:

NVIDIA has firmly established itself as a leader in the realm of client computing, continuously pushing the boundaries of innovation in graphics and AI technologies. With a deep commitment to enhancing user experiences, NVIDIA's client computing business focuses on delivering solutions that power everything from gaming and creative workloads to enterprise applications. for its GeForce graphics cards, the company has redefined high-performance gaming, setting industry standards for realistic visuals, fluid frame rates, and immersive experiences. Complementing its gaming expertise, NVIDIA's Quadro and NVIDIA RTX graphics cards cater to professionals in design, content creation, and scientific fields, enabling real-time ray tracing and AI-driven workflows that elevate productivity and creativity to unprecedented heights. By seamlessly integrating graphics, AI, and software, NVIDIA continues to shape the landscape of client computing, fostering innovation and immersive interactions in a rapidly evolving digital world.

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About TSMC:

TSMC, or Taiwan Semiconductor Manufacturing Company, is a semiconductor foundry based in Taiwan. Established in 1987, TSMC is a important player in the global semiconductor industry, specializing in the manufacturing of semiconductor wafers for a wide range of clients, including technology companies and chip designers. The company is known for its semiconductor fabrication processes and plays a critical role in advancing semiconductor technology worldwide.

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Technology Explained


HBM3E: HBM3E is the latest generation of high-bandwidth memory (HBM), a type of DRAM that is designed for artificial intelligence (AI) applications. HBM3E offers faster data transfer rates, higher density, and lower power consumption than previous HBM versions. HBM3E is developed by SK Hynix, a South Korean chipmaker, and is expected to enter mass production in 2024. HBM3E can achieve a speed of 1.15 TB/s and a capacity of 64 GB per stack. HBM3E is suitable for AI systems that require large amounts of data processing, such as deep learning, machine learning, and computer vision.

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NAND: NAND technology is a type of non-volatile memory that is used in many computer applications. It is a type of flash memory that is used to store data in a non-volatile manner, meaning that the data is not lost when the power is turned off. NAND technology is used in many computer applications, such as solid-state drives, USB flash drives, digital cameras, and memory cards. It is also used in many embedded systems, such as cell phones, tablets, and other consumer electronics. NAND technology is a reliable and cost-effective way to store data, making it a popular choice for many computer applications.

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