Lam Research introduces Lam Cryo 3.0, propelling 3D NAND scaling with cryogenic etch tech.

Lam Research Corp. has just launched its latest innovation in 3D NAND flash memory etching: Lam Cryo 3.0. This is the third generation of their cryogenic dielectric etch technology, and it solidifies their position as leaders in this field. As the demand for higher capacity and performance memory continues to rise due to the proliferation of AI, Lam Cryo 3.0 provides the essential etch capabilities needed for manufacturing 3D NAND.

So, what exactly does Lam Cryo 3.0 bring to the table? Well, it leverages ultra cold temperatures, high power confined plasma reactor technology, and advancements in surface chemistry to deliver industry-leading precision and profile control. In simpler terms, it etches with incredible accuracy and control, paving the way for the production of future 1,000-layer 3D NAND.

Sesha Varadarajan, Senior Vice President of Global Products Group at Lam Research, explains the significance of Lam Cryo 3.0: “With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era’s key NAND manufacturing hurdles.”

To understand why this technology is so crucial, let’s take a step back and look at how 3D NAND has evolved. Until now, the advancement of 3D NAND has primarily relied on stacking vertical layers of memory cells. This is made possible by etching deep and narrow memory channels. However, even the slightest deviations from the desired profile of these features can have a negative impact on the electrical properties of the die and potentially affect yield.

This is where Lam Cryo 3.0 comes in. It is specifically designed to address these etch challenges and ensure that scaling 3D NAND is a smooth process. Neil Shah, Co-founder and Vice President of Research at Counterpoint Research, explains: “Lam Cryo 3.0 cryogenic etch technology is a significant leap beyond conventional techniques. It etches memory channels that are more than 50 times deeper than their width with near perfect precision and control, achieving a profile deviation of less than 0.1%. This breakthrough significantly enhances advanced 3D NAND yields and overall performance to enable chipmakers to compete well in the AI era.”

Now, let’s dive into the technical details of Lam Cryo 3.0. It utilizes Lam Research’s unique, high-powered confined plasma reactors, along with process improvements and temperatures below -0°C. These factors allow for the use of new and innovative etch chemistries. When combined with Lam’s latest Vantex dielectric system, which uses scalable, pulsed plasma technology, Lam Cryo 3.0 greatly enhances etch depth and profile control. With this technology, 3D NAND manufacturers can etch memory channels with depths of up to 10 microns while maintaining less than 0.1% deviation in critical dimensions.

But Lam Cryo 3.0 isn’t just about precision and control. It also offers outstanding productivity, allowing for two-and-a-half times faster etching compared to conventional processes. This, coupled with better wafer-to-wafer repeatability, helps 3D NAND manufacturers achieve high yield at a lower cost. Additionally, Lam Cryo 3.0 is more sustainable, with a 40% reduction in energy consumption per wafer and up to a 90% reduction in emissions compared to traditional etch processes.

For those looking to maximize their equipment investment, Lam Cryo 3.0 can be seamlessly integrated into Lam’s newest Vantex system. It is also compatible with the company’s portfolio of Flex HAR dielectric etchers, which are used by all major memory manufacturers for 3D NAND mass production.

Lam Cryo 3.0 is the latest addition to Lam’s impressive lineup of etch, deposition, and clean solutions for 3D NAND manufacturing. With over two decades of expertise in wafer fabrication etch technologies and seven generations of 3D NAND, Lam Research continues to lead the way in this space. In fact, they introduced the world’s first cryogenic etch offering into volume production back in 2019. Today, nearly 1,000 of the over 7,500 Lam HAR dielectric etch chambers used in NAND production utilize cryogenic etch technology.

Leading memory manufacturers can now access Lam Cryo 3.0, and it promises to revolutionize the world of 3D NAND. As we race towards achieving 1,000-layer 3D NAND by the end of 2030, Lam Cryo 3.0 provides the necessary tools to meet the demands of the AI era. With its unparalleled precision, control, and sustainability, Lam Cryo 3.0 is set to reshape the future of memory technology.

Technology Explained

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NAND: NAND technology is a type of non-volatile memory that is used in many computer applications. It is a type of flash memory that is used to store data in a non-volatile manner, meaning that the data is not lost when the power is turned off. NAND technology is used in many computer applications, such as solid-state drives, USB flash drives, digital cameras, and memory cards. It is also used in many embedded systems, such as cell phones, tablets, and other consumer electronics. NAND technology is a reliable and cost-effective way to store data, making it a popular choice for many computer applications.

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