SK hynix introduces Innovations at FMS 2024, Elevating Tech Advancements

SK hynix Inc. has just announced its participation in FMS 2024, a major semiconductor memory event happening in Santa Clara, California. From August 6th to August 8th, SK hynix will be showcasing its latest advancements in memory technologies and products, while also presenting its future visions in the AI space. This event, called Future Memory and Storage, used to be known as the Flash Memory Summit, but it has been rebranded this year to include a wider range of participants, including DRAM and storage providers, due to the growing interest in AI technology.

SK hynix is taking this opportunity to not only display its products but also deliver a keynote speech to introduce its future visions. The company wants to highlight its competitiveness and leadership in the AI memory solution industry, just like it did last year when it announced the development of the industry’s highest 321-layer NAND at FMS.

The event will kick off with a keynote speech by Unoh Kwon, Head of HBM Process Integration, and Chunsung Kim, Head of SSD PMO, at SK hynix. They will be talking about “AI Memory & Storage Solution Leadership and Vision for AI Era.” Kwon will introduce the company’s DRAM and NAND product portfolios, while Kim will focus on AI memory solutions optimized for AI implementation.

During the event, SK hynix will be showcasing samples of its next-generation AI memory products. One of them is the 12-layer HBM3E, which is expected to be mass-produced in the third quarter. Another highlight is the 321-high NAND, which is planned to be shipped from the first half of next year. These products demonstrate SK hynix’s commitment to pushing the boundaries of memory technology.

In addition to displaying its own products, SK hynix will also be showcasing systems from its customers that are powered by its flagship products. This serves as a testament to the strong partnership between SK hynix and some of the world’s biggest technology companies.

But SK hynix isn’t just focused on technology; it’s also committed to promoting diversity in the memory industry. As a show of support, the company has decided to sponsor the FMS Super Women Conference, which will be held alongside the main event. This conference aims to encourage important female leaders in the memory industry. Haesoon Oh, Head of NAND Advanced Process Integration and SK hynix’s first female executive-level fellow researcher, will be making a presentation on the role of diversity for the company’s future technology innovation.

Justin Kim, President and the Head of AI Infra at SK hynix, emphasized the growing importance of memory solutions in the AI era. He stated, “With the AI era opening in full, the importance of memory solutions, a combination of multiple products to increase performance, instead of single DRAM and NAND products, is growing.” SK hynix aims to showcase its competitiveness and technological leadership in the global market at FMS.

Overall, SK hynix’s participation in FMS 2024 is an exciting opportunity for the company to demonstrate its advancements in memory technologies, present its future visions in the AI space, and highlight its commitment to diversity. This event serves as a platform for SK hynix to showcase its competitiveness and technological leadership, while also fostering valuable partnerships with industry leaders.

Background Information

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About SK hynix:

SK Hynix is a important South Korean semiconductor company known for its innovative contributions to the global technology landscape. Specializing in the production of memory solutions, SK Hynix has played a vital role in shaping the semiconductor industry. With a commitment to research and development, they have continuously pushed the boundaries of memory technology, resulting in products that power various devices and applications.

  

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Technology Explained

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HBM3E: HBM3E is the latest generation of high-bandwidth memory (HBM), a type of DRAM that is designed for artificial intelligence (AI) applications. HBM3E offers faster data transfer rates, higher density, and lower power consumption than previous HBM versions. HBM3E is developed by SK Hynix, a South Korean chipmaker, and is expected to enter mass production in 2024. HBM3E can achieve a speed of 1.15 TB/s and a capacity of 64 GB per stack. HBM3E is suitable for AI systems that require large amounts of data processing, such as deep learning, machine learning, and computer vision.

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NAND: NAND technology is a type of non-volatile memory that is used in many computer applications. It is a type of flash memory that is used to store data in a non-volatile manner, meaning that the data is not lost when the power is turned off. NAND technology is used in many computer applications, such as solid-state drives, USB flash drives, digital cameras, and memory cards. It is also used in many embedded systems, such as cell phones, tablets, and other consumer electronics. NAND technology is a reliable and cost-effective way to store data, making it a popular choice for many computer applications.

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SSD: A Solid State Drive (SSD) is a modern data storage device that employs flash memory technology to store data electronically. Unlike traditional hard disk drives (HDDs), SSDs have no moving parts, resulting in significantly faster read and write speeds. This leads to quicker boot times, faster application loading, and smoother overall system performance. SSDs are known for their durability, shock resistance, and energy efficiency, making them ideal for laptops, ultrabooks, and other portable devices. They come in various form factors, including 2.5-inch, M.2, and PCIe cards, and are favored for their reliability, quiet operation, and reduced heat generation

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