STMicroelectronics Unveils Italy’s Pioneering Silicon Carbide Facility, Revolutionizing Integrated Technology

STMicroelectronics plans to build a new high-volume silicon carbide manufacturing facility in Catania, Italy, forming a fully integrated campus for mass production of SiC and supporting customers in their transition to electrification and pursuit of higher efficiency.

STMicroelectronics is a leading global semiconductor company with a strong track record of innovation and success.
The creation of the Silicon Carbide Campus will support customers in the automotive, industrial, and cloud infrastructure sectors during their transition to electrification and pursuit of higher efficiency.
The campus will serve as the hub for ST's global SiC ecosystem, integrating all steps in the production flow and utilizing 200 mm technologies for enhanced yields and performance.

STMicroelectronics, a leading global semiconductor company, has announced plans to build a new high-volume silicon carbide (SiC) manufacturing facility in Catania, Italy. This facility, along with the SiC Substrate manufacturing facility already underway on the same site, will form ST’s Silicon Carbide Campus, a fully integrated manufacturing facility for mass production of SiC.

The creation of the Silicon Carbide Campus is a significant milestone for ST as it supports customers in the automotive, industrial, and cloud infrastructure sectors during their transition to electrification and their pursuit of higher efficiency. The campus will enable ST to innovate with high-volume manufacturing capacity, benefiting European and global customers as they seek energy-efficient solutions to meet decarbonization goals.

The Silicon Carbide Campus will serve as the hub for ST’s global SiC ecosystem, integrating all steps in the production flow. This includes SiC substrate development, epitaxial growth processes, 200 mm front-end wafer fabrication, module back-end assembly, process R&D, product design, advanced R&D labs, and full packaging capabilities. By utilizing 200 mm technologies at each step of the process, the campus will achieve enhanced yields and performance for the mass production of 200 mm SiC wafers.

The new facility is expected to begin production in 2026 and reach full capacity by 2033, producing up to 15,000 wafers per week. The total investment for the project is estimated to be around five billion euros, with support from the State of Italy and the EU Chips Act. Sustainability is a key focus in the design and operation of the Silicon Carbide Campus to ensure responsible resource consumption.

Silicon Carbide (SiC) is a compound material that offers numerous advantages over traditional silicon for power applications. Its wide bandgap and intrinsic characteristics make it ideal for high-voltage power devices. SiC power devices, such as SiC MOSFETs and full SiC modules, are particularly beneficial in electric vehicles, fast-charging infrastructure, renewable energies, and industrial applications. They offer higher electric currents and lower leakage compared to silicon semiconductors, resulting in increased energy efficiency.

ST’s leadership in SiC is the culmination of 25 years of research and development, supported by a robust portfolio of patents. Catania has played a crucial role in ST’s SiC innovation, housing the company’s largest R&D and manufacturing operations. This investment will further strengthen Catania’s position as a global competence center for SiC technology.

Currently, ST manufactures its flagship SiC products on two 150-millimeter wafer lines in Catania and Ang Mo Kio (Singapore). The company also has a joint venture with Sanan Optoelectronics in Chongqing (China) for a 200-millimeter facility dedicated to serving the Chinese market. ST’s wafer production facilities are supported by automotive-qualified assembly and test operations in Bouskoura (Morocco) and Shenzhen (China). SiC substrate R&D and industrialization take place in Norrköping (Sweden) and Catania.

Overall, the new Silicon Carbide Campus represents a significant step forward for STMicroelectronics in its commitment to SiC technology and its ability to meet the evolving needs of customers in various industries.

STMicroelectronics introduces Italy’s Pioneering Silicon Carbide Facility, Revolutionizing Integrated Technology

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Technology Explained

Substrate: The technology substrate is a layer of material that provides a foundation for the components of a computer system. It is the foundation upon which the components of a computer system are built. It is usually made of a material such as silicon, which is a semiconductor material. The technology substrate is used to create the circuits and pathways that allow the components of a computer system to communicate with each other. It is also used to create the physical structure of the computer system, such as the motherboard, memory, and other components. The technology substrate is essential for the functioning of a computer system, as it provides the necessary pathways for the components to communicate with each other. It is also used to create the physical structure of the computer system, such as the motherboard, memory, and other components.